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文献类型：专利
| 作者 | SUEMATSU YASUHARU; ARAI SHIGEHISA; TOMORI JUICHI |
| 发表日期 | 1990-07-04 |
| 专利号 | JP1990030195B2 |
| 著作权人 | SHINGIJUTSU KAIHATSU JIGYODAN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To eliminate the reflection of the coupling section by a method wherein the active waveguide of the title device is embedded in the external waveguide and the propagation constants and the electric field distribution in both regions of these waveguides are matched. CONSTITUTION:A GaInAsP active waveguide layer 2 and a GaInAsP protection layer 3 are successively grown on an n-InP substrate 1, thus preparing a wafer 5 Next, with an active waveguide region 52 remaining, the other external waveguide regions 53, 54 are selectively etched to the top of the substrate; further, primary gratings 55, 56 are formed on the substrate. Then, a GaInAsP external waveguide layer 4, a p-InP layer 5, and a p-GaInAsP cap layer 6 are successively grown over the whole surface. Thereafter, a current stricture structure layer consisting of a p-InP layer 7, an n-InP layer 8, and a p-GaInAsP layer 9 is formed by reverse mesa selective etching in a lateral direction through embedding. This process can eliminate most of the generation of reflection or scattering by good coupling between the active waveguides and external waveguides. |
| 公开日期 | 1990-07-04 |
| 申请日期 | 1985-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85270]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHINGIJUTSU KAIHATSU JIGYODAN |
| 推荐引用方式 GB/T 7714 | SUEMATSU YASUHARU,ARAI SHIGEHISA,TOMORI JUICHI. -. JP1990030195B2. 1990-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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