Semiconductor quantum well laser
文献类型：专利
| 作者 | IMAMOTO HIROSHI |
| 发表日期 | 1989-10-20 |
| 专利号 | JP1989264286A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor quantum well laser |
| 英文摘要 | PURPOSE:To improve temperature characteristics and threshold current after obtaining steep hetero interfaces and active layers of good quality, by causing each thick barrier layer surrounding the both sides of an active layer to have a superlattice structure possessing a mixed crystal ratio by laminating alternately thin films having different mixed crystal ratios, the mixed crystal ratio of the superlattice structure being an intermediate value of the ratios of the thin films. CONSTITUTION:A semiconductor laser is manufactured by forming various layers: an n-type GaAs buffer layer 2; an n-type Al0.4Ga0.6As clad layer 3; non-doped Al0.4Ga0.6 As/GaAs superlattice barrier layers 4; non-doped GaAs quantum well active layers 50Angstrom 5; a p-type Al0.7Ga0.3As clad layer 6; and a p-type GaAs cap layer 7 are caused to grow continuously on an n-type GaAs substrate In such a case, a large number of layers of Al0.4Ga0.6As 21 and GaAs 22 are laminated alternately in the superlattice battier layer 4. The average composition of Al in the barrier layer 4 is 0.2. This situation allows the interval between the X point and the GAMMA point to have a large value due to provision of each barrier layer 4. Then, this configuration decreases the leakage of injected carriers and improves the temperature characteristics. Further, on the occasion of seeking short wavelengths, the rise of threshold value is suppressed. |
| 公开日期 | 1989-10-20 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | IMAMOTO HIROSHI. Semiconductor quantum well laser. JP1989264286A. 1989-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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