Method for liquid phase epitaxial growth
文献类型：专利
| 作者 | KASHIWADA YASUTOSHI; KAJIMURA TAKASHI; AIKI KUNIO; SHIGE NORIYUKI; SAWAI MASAAKI |
| 发表日期 | 1983-11-15 |
| 专利号 | JP1983196014A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To remove an element of bad life property caused by meniscus line at selecting test for a short time, by a method wherein stripe direction of a substrate single-crystal is made perpendicular to sliding direction of a growing solution. CONSTITUTION:To obtain epitaxial layer by contacting a growing solution with a substrate single-crystal 13, the crystal 13 is fixed and the growing solution is slided. The crystal 13 is installed to a board so that stripe direction 15 of the crystal 13 is perpendicular to sliding direction 16 of the growing solution. Since meniscus line produced at the liquid phase epitaxial growing is made approximately parallel to stripe direction of an element, any element of bad life property caused by the meniscus line can be removed at selecting test for a short time. |
| 公开日期 | 1983-11-15 |
| 申请日期 | 1982-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KASHIWADA YASUTOSHI,KAJIMURA TAKASHI,AIKI KUNIO,et al. Method for liquid phase epitaxial growth. JP1983196014A. 1983-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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