Multiple wavelength laser
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI |
| 发表日期 | 1992-12-16 |
| 专利号 | JP1992364084A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple wavelength laser |
| 英文摘要 | PURPOSE:To realize a low threshold value by changing thickness of a semiconductor layer on a MESA protrusion having a constant width or thickness of a semiconductor layer within a MESA groove having a constant width and then providing active layers in different wavelengths of emitted light. CONSTITUTION:A MESA protrusion 2M is formed on the main surface 1S of a semiconductor base material 1 and width Wg1 of the MESA groove 2G provided between MESA protrusions 2M is changed with the width Wm thereof maintained to a constant value. Or, width Wg of the mesa proove 2G is maintained to a constant value and width Wm1 of MESA protrusion is changed to form the parallel arrangement thereof. A semiconductor layer consisting of at least a first clad layer 4, an active layer 5 having a quantum well structure and a second clad layer 6 is sequentially epitaxially grown on the entire part including the MESA protrusion 2M to form an eptiaxial growth layer 10. The active layers 5 in different wavelengths of emitted light are provided by changing thickness of a semiconductor layer 19 on the MESA protrusion 2M or that within the MESA groove 2G. |
| 公开日期 | 1992-12-16 |
| 申请日期 | 1991-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85277]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI. Multiple wavelength laser. JP1992364084A. 1992-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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