Semiconductor laser
文献类型：专利
| 作者 | FURUKAWA RYOZO; SHINOZAKI KEISUKE; WATANABE AKIRA; USHIKUBO TAKASHI |
| 发表日期 | 1988-09-20 |
| 专利号 | JP1988226090A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate a higher mode oscillation, the rise of a threshold current and the degradation of temperature characteristics, and facilitate a high output oscillation with a lateral basic mode, by a method wherein a light guide layer is composed of an AlxGa1-xAs layer whose conductivity type is the same as that of a cladding layer adjacent to it and whose thickness and mixed crystal ratio X are specified and the thickness of an active layer is less than a specific value. CONSTITUTION:A lower cladding layer 14 composed of a P-type AlGaAs layer is formed on a V-groove 13 and an N-type GaAs layer 12 and a P-type AlGaAs light guide layer 22 with a thickness about 0.05 0.08 mum is formed on the lower cladding layer 14. Further, an AlGaAs active layer 16 with a thickness of 0.05 mum is formed on the light guide layer 22 and, on the active layer 16, an N-type AlGaAs light reflecting layer 17, an N-type AlGaAs upper cladding layer 18 and an N-type GaAs cap layer 10 are successively formed. In the case of manufacturing a semiconductor laser which generates an 830 nm oscillation like this, if the mixed crystal ratio Xguide of the light guide layer is selected to be 0.37-0.39, the thickness of the light guide layer dt is selected to be 0.05-0.08 mum and the thickness da is selected to be 0.05 mum or less, an output higher than 200 mW can be obtained with a lateral basic mode. |
| 公开日期 | 1988-09-20 |
| 申请日期 | 1987-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85278]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FURUKAWA RYOZO,SHINOZAKI KEISUKE,WATANABE AKIRA,et al. Semiconductor laser. JP1988226090A. 1988-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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