Manufacture of semiconductor laser
文献类型：专利
| 作者 | NAKAYAMA YOSHINORI; TSUJI SHINJI; HIRAO MOTONAO; KAJIMURA TAKASHI |
| 发表日期 | 1985-06-13 |
| 专利号 | JP1985107881A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable to manufacture of an element, semiconductor laser, having a characteristic of a stabilized transverse mode at higher output with superior yield by a method wherein a vertical mesa form is made up to just over an active layer by performing an anisotropic etching. CONSTITUTION:An N type InP buffer layer 2, an N type InGaAsP optical guide layer 3, an undoped InGaAsP active layer 4, a P type InP clad layer 5 and a P type InGaAsP cap layer 6 are grown in order on an N type InP substrate After an etching protective film 7 has been formed in a striped configuration, the layer 6 is removed with a material selective etching liquid of InGaAsP. After that, the layer 5 is removed with an HCl-system etching liquid having a material selectivity of InP. At this time, as the mesa has an anisotropy, by which the sides of the mesa are turned into specific faces with this etching liquid, a vertical mesa form can be formed up to right over the layer 4. After then, the layer 3 is made to expose. At this time, the film width of the layer 4 is same as that of the layer 7. As a result, the width of the layer 4 can be precisely controlled by the width of the film 7. |
| 公开日期 | 1985-06-13 |
| 申请日期 | 1983-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85280]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | NAKAYAMA YOSHINORI,TSUJI SHINJI,HIRAO MOTONAO,et al. Manufacture of semiconductor laser. JP1985107881A. 1985-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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