Multi-point emitting type semiconductor laser
文献类型：专利
| 作者 | HATTORI AKIRA; KONO MASAKI |
| 发表日期 | 1990-04-09 |
| 专利号 | JP1990097082A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-point emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the electrical interference between light emitting points and to dispense with a device for the electrical isolation through a sub-mount in a J-D/B by a method wherein a viahole, a p-electrode, and an n-electrode are formed in a substrate so as to reach to a second contact layer corresponding to an isolated active layer. CONSTITUTION:A laser diode composed of the following layers is formed on an insulating substrate 8: n-type contact layers 2a and 2b of first contact layers; n-type first clad layers 3a and 3b; active layers 4a and 4b; p-type second clad layers 5a and 5b; p-type current block layers 6a and 6b; and p-type contact layers 7a and 7b of second contact layers. An isolating groove 9 is formed so as to reach the inside of the substrate 8. By this setup, the p-type contact layers 7a and 7b are electrically isolated from each other and made to correspond to light emitting points 1a and 1b separately. And, so as to make a J-D/B easily, via-holes 12 are isolatedly formed from the substrate side to reach the p-type contact layers 7a and 7b corresponding to the active layers 4a and 4b, and p-electrodes 11a and 11b of light emitting points are formed on the rear of the substrate 8. Therefore, the light emitting points are prevented from interfering electrically with each other and a J-D/B can be easily realized. |
| 公开日期 | 1990-04-09 |
| 申请日期 | 1988-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85281]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA,KONO MASAKI. Multi-point emitting type semiconductor laser. JP1990097082A. 1990-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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