Semiconductor laser
文献类型：专利
| 作者 | SHIMA KATSUTO; OOSAKA SHIGEO; YOSHIDA KATSUJI |
| 发表日期 | 1985-04-24 |
| 专利号 | JP1985072284A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive to stabilize the lateral mode by inhibition of the oscillation of high degree mode by a method wherein the titled device is constructed in such a manner that a stripe-form optical wave guide produced by Zn diffusion having a width varying periodically or not periodically is formed in the active layer. CONSTITUTION:This device of GaAs-GaAlAs series double hetero structure is formed by successive lamination of an N type GaAlAs clad layer 2, the N type GaAs active layer 3, p type GaAlAs active layer 4, and an N type GaAlAs current stricture layer 5 on a GaAs substrate In said device of this structure, the optical wave guide 6' is formed in the Zn-diffused stripe region 6 forming a current passage and in the layer 3. Then, the formation of the region 6 in such a manner that its width varies periodically or not periodically causes the wave guide 6' to vary in the width periodically or not periodically. Such a construction enables well inhibition of the oscillation of high degree mode, thus contriving to sufficiently stabilizing the lateral mode. |
| 公开日期 | 1985-04-24 |
| 申请日期 | 1983-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85283]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO,OOSAKA SHIGEO,YOSHIDA KATSUJI. Semiconductor laser. JP1985072284A. 1985-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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