Manufacture of semiconductor device
文献类型：专利
| 作者 | FURUMIYA SATOSHI; YAMAGUCHI AKIO |
| 发表日期 | 1982-12-04 |
| 专利号 | JP1982197822A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To eliminate crystal defects produced in an epitaxial layer grown on a III-V compound semiconductor InP substrate, by irradiating laser light having a wavelength less than light emisssion and detection wave length on a multilayer structural semiconductor layer. CONSTITUTION:YAG laser light is irradiated from the side of the third InP layer 9 on a wafer with an InP layer 7, InGaAsP layer 8 and InP layer 9 successively epitaxial grown on an InP substrate 6 to excite the InGaAsP layer 8 for photoluminescence pattern. Besides, said laser light scans over the wafer with the emission of luminescence light at the position without crystal defects for bright pattern. At the position with crystal defects, luminescence light is not emitted to form dark lines for a pattern as shown in the figure. When YAG laser light is irradiated inside of the dark line, the dark line on the irradiated part is extinguished. |
| 公开日期 | 1982-12-04 |
| 申请日期 | 1981-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85285]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI,YAMAGUCHI AKIO. Manufacture of semiconductor device. JP1982197822A. 1982-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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