Optical semiconductor device
文献类型：专利
| 作者 | TAKANO SHINJI |
| 发表日期 | 1989-10-12 |
| 专利号 | JP1989256184A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To realize high speed modulation with improved reliability, reproducibility and stability, by providing a groove in a semiconductor layer for constricting electric current, the groove being filled with sparse SiO2 or SiN produced by baking organic silane. CONSTITUTION:Grooves 85 are formed outside a double channel. An SiO2 film 70 is deposited in the grooves 85 by the heat CVD process, for example. Organic silane applied thereon is subjected to spin coating and baked at a certain temperature for a certain period of time. Thereby, the grooves 85 are filled flatly with pumice-like SiO2 71 including a multiplicity of voids. Further, a part of the SiO2 present over the flat section is removed by dry etching. In this manner, electric current is constricted and very high speed response can be obtained with improved reliability, stability and reproducibility. |
| 公开日期 | 1989-10-12 |
| 申请日期 | 1988-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85288]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TAKANO SHINJI. Optical semiconductor device. JP1989256184A. 1989-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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