Semiconductor light emitting device
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; FUKUDA HIROKAZU; EBE KOUJI; SHINOHARA KOUJI |
| 发表日期 | 1985-06-28 |
| 专利号 | JP1985120583A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To eliminate a shortcircuit caused by the disconnection of a buried layer by forming a buried layer and an insulating film on an active layer mode of a mesa-shaped lead, tin and tellurium formed on a semiconductor substrate made of at least lead or tellurium, and forming electrodes contacted with the buried layer through a hole formed in the insulating film. CONSTITUTION:A P type Pb.Te.Se enclosure layer 12 is grown, for example, by a liquid phase epitaxial growing method on a Pb.Te substrate 1 Then, a Pb. Sn.Te active layer 13 is grown by similarly a liquid phase eqitaxial growing method. Then, the layers 13, 12 are patterned to form a mesa-shape. Further, an N type Pb.Sn.Te buried layer 14 is formed by a liquid phase epitaxial growing method. Then, an insulating film 15 is grown, the film 15 is then patterned to form a hole 15A to expose part of the surface of the layer 14. Then, electrodes 16 made of gold is similarly formed by depositing and electrodes 17 made of gold are also formed on the back surface of the substrate 1 Then, individual semiconductor lasers are separated to complete it. |
| 公开日期 | 1985-06-28 |
| 申请日期 | 1983-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85289]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,FUKUDA HIROKAZU,EBE KOUJI,et al. Semiconductor light emitting device. JP1985120583A. 1985-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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