Semiconductor laser
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; KAJIMURA TAKASHI |
| 发表日期 | 1985-06-13 |
| 专利号 | JP1985107882A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the laser characteristics of a semiconductor laser by a method wherein, when a coating is performed on the luminous output end surfaces of the semiconductor laser element, the end surface on one side is coated in such a way as to increase reflection, while the end surface on the other side is coated in such a way as to reduce reflection. CONSTITUTION:A first dielectric film 1 is coated on the end surface of one side of a semiconductor laser element 11 in a film thickness of lambda/32n1-7lambda/321 or 9lambda/32n1-15lambda/32n Provided that, the (lambda) is the oscillating wavelength of the laser. Then, second dielectric films 2 and third dielectric films 3 are laminated in order on the end surface of the other side of the semiconductor laser element 11 in a film thickness of lambda/4n2 and a film thickness of lambda/4n3 respectively, and at least one group of two-layer films is coated on the end surface of the other side. Provided that, the (n1)-(n3) are respectively a refractive index and the relation between both of the (n1) and the (n2) and the (n3) is n1 and n2 |
| 公开日期 | 1985-06-13 |
| 申请日期 | 1983-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85291]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,KAJIMURA TAKASHI. Semiconductor laser. JP1985107882A. 1985-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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