Semiconductor laser device
文献类型：专利
| 作者 | UMEDA, JUN-ICHI; NAKASHIMA, HISAO; KAJIMURA, TAKASHI; KURODA, TAKAO |
| 发表日期 | 1982-11-10 |
| 专利号 | EP0064339A1 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device has an active layer (3) between cladding layers (2; 4, 6). To phase-lock the laser emissions and thus give high power laser output which can be condensed and collimated, one of the cladding layers (4, 6) is provided with strip-like optical absorption regions (5) arranged in a direction intersecting the direction of travel of , the laser light. This causes a variation of a complex refractive index for the laser beam, and local emissions of adjacent lasers give rise to a non-linear interaction therebetween. |
| 公开日期 | 1982-11-10 |
| 申请日期 | 1982-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85298]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | UMEDA, JUN-ICHI,NAKASHIMA, HISAO,KAJIMURA, TAKASHI,et al. Semiconductor laser device. EP0064339A1. 1982-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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