Semiconductor element
文献类型：专利
| 作者 | UENO YOSHIKI; KONAKANO SHINICHI; SOGA HAJIME; ITO NOBUE |
| 发表日期 | 1988-09-16 |
| 专利号 | JP1988222419A |
| 著作权人 | NIPPON SOKEN INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To improve the thermal characteristics of a semiconductor element, by forming a diamond film on the surface of a sub-mount, forming a single crystal film on said film, and growing a semiconductor epitaxial film on said film. CONSTITUTION:A diamond film 12 having a high heat conductivity is formed on an Si sub-mount. A single crystal film 13 is formed on the diamond film 12 by recrystallization. An N-type GaAs layer 41, an N-type AlxGa1-xAs clad layer 42, a GaAs active layer 43, a P-type AlxGa1-xAs clad layer 44, a P-type GaAs cap layer 45 and the like are provided on the crystal film 13. Then, heat yielded in a semiconductor element is transferred to the diamond film 12 through the single crystal film 13. Thus the thermal characteristics of the semiconductor element are improved. |
| 公开日期 | 1988-09-16 |
| 申请日期 | 1987-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85301]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON SOKEN INC |
| 推荐引用方式 GB/T 7714 | UENO YOSHIKI,KONAKANO SHINICHI,SOGA HAJIME,et al. Semiconductor element. JP1988222419A. 1988-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。