Semiconductor laser device
文献类型：专利
| 作者 | MATSUMOTO SHIGETO |
| 发表日期 | 1989-06-12 |
| 专利号 | JP1989149498A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:Not only to enable a high speed modulation but also obtain a high optical output by a method wherein a current constriction is done by a semiconductor current blocking layer of semi-insulator and a semiconductor optical guide circuit provided with a forbidden bandwidth larger than that of an active layer is provided near to a semiconductor active layer. CONSTITUTION:An n-type AlxGa1-xAs layer 2, an n-type AlyGa1-yAs optical guide circuit layer 3, an n-type AlxGa1-xAs clad layer 4, and a semi-insulating GaAs current blocking layer 5 are successively laminated and subjected to an etching so as to form a stripe-like groove removing a part of the semi- insulating GaAs current blocking layer 5. Moreover, an n-type AlxGa1-xAs clad layer 6, an AlzGa1-zAs active layer 7, a p-type AlxGa1-xAs clad layer 8, and a p-type GaAs contact layer 9 are successively laminated on the groove 13 and the semi-insulating GaAs current blocking layer 5, and then an n-side electrode 10 and a p-side electrode 11 are constructed. Here, z, y, and x are determined so as to satisfy an equation, 0<=Z=0.05 |
| 公开日期 | 1989-06-12 |
| 申请日期 | 1987-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHIGETO. Semiconductor laser device. JP1989149498A. 1989-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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