Manufacture of semiconductor laser
文献类型：专利
| 作者 | ONO YUICHI; FUKUZAWA KAORU; NAKATSUKA SHINICHI; KAJIMURA TAKASHI |
| 发表日期 | 1987-06-26 |
| 专利号 | JP1987143490A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the quality of a boundary surface of epitaxial growth, by using a selective growth method wherein an SiO2 mask is used to form a current confinement layer of N-GaAs for an internal stripe structure and a liquid crystallization method wherein impurity and AlAs composition are used to improve the quality of a boundary surface of growth. CONSTITUTION:A semiconductor 14 whose surface is unstable, a hetero- semiconductor thin film 16 whose surface is stable and a semiconductor thin film 17 are formed in order on the double-hetero structure of a semiconductor laser. The stripe of an insulating film 18 is formed, which is applied to a mask to grow a semiconductor 19. Then the insulating film 18 is eliminated, and subsequently the whole thin film 17 and the surface part of the semiconductor 19 directly under the insulating film are eliminated by etching. That is, a mixed crystal is formed as the result of spacial substitution and exchange of composition elements in the semiconductor 14 and the thin film 16 by the effect of doping impurity in semiconductors 21 and 22 grown on the thin film 16 and the crystal of semiconductor 19. The band gap of the thin film 16 is made wide, thereby. |
| 公开日期 | 1987-06-26 |
| 申请日期 | 1985-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85305]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,FUKUZAWA KAORU,NAKATSUKA SHINICHI,et al. Manufacture of semiconductor laser. JP1987143490A. 1987-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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