Semiconductor light emitting device
文献类型：专利
| 作者 | OOSAKA SHIGEO; YOSHIDA KATSUJI |
| 发表日期 | 1984-02-16 |
| 专利号 | JP1984029485A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce the threshold current making lateral mode stable in a semiconductor device of single heterojunction type with high light emitting output by a method wherein an active layer is divided into p type and n type regions with high concentration providing the boundary thereof with the differences both in the electron energy levels and the refractive indices and connecting the regions agains mainly in the p type region of p-n junction to close the carrier while the light is also closed in the vertical direction simultaneously forming the shape of p-n junction into curved surface of a downward convex part and converging the light on the central part to prevent multiple modes from happening. CONSTITUTION:A GaAlAs active layer 12 including n type impurity, a GaAlAs clad layer 13 including n type impurity, a GaAlAs layer 15 including p type impurity and an n GaAs contact layer 16 are laminated on an n GaAs substrate 11 by means of liquid epitaxial growth and a mask of SiO2 glass films 19 is formed on the contact layer 16 to heattreat a mixture of ZnAs2 and As as a source forming the specified p-n junction 14 by means of coating the contact layer 16 with the glass film 19 again for performing the heattreatment. |
| 公开日期 | 1984-02-16 |
| 申请日期 | 1982-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO,YOSHIDA KATSUJI. Semiconductor light emitting device. JP1984029485A. 1984-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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