Controlling passive facet reflections
文献类型：专利
| 作者 | SMOLSKI, OLEG, V.; BULLINGTON, JEFF, A. |
| 发表日期 | 2002-10-03 |
| 专利号 | WO2002077700A2 |
| 著作权人 | INFINITE PHOTONICS, INC. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Controlling passive facet reflections |
| 英文摘要 | Wafer scale processing techniques produce chip-laser-diodes with a diffraction grating (30) that redirects output light out the top and/or bottom surfaces. Noise reflections are carefully controlled, allowing significant reduction of the signal fed to the active region. Generally this structure has a core layer (34) containing active-region (46) a waveguide region (48) longitudinally-displaced from an active and a noise-reducing passive region (54) with an adjacent a passive-end facet, and the improved core layer has at least one of, an ion-implanted passive region (54), anti-reflection coating (88) on the passive-end facet, reverse biasing electrodes a (80, 82, 84) above and below the passive region, at least partially removal of passive region material from adjacent the passive-end facet, and a combined waveguide and passive region length that is at least one-and-a-half times as long as the active region. |
| 公开日期 | 2002-10-03 |
| 申请日期 | 2002-03-22 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85312]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INFINITE PHOTONICS, INC. |
| 推荐引用方式 GB/T 7714 | SMOLSKI, OLEG, V.,BULLINGTON, JEFF, A.. Controlling passive facet reflections. WO2002077700A2. 2002-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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