Visible semiconductor laser
文献类型：专利
| 作者 | GOMYO AKIKO |
| 发表日期 | 1990-11-16 |
| 专利号 | JP1990280393A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible semiconductor laser |
| 英文摘要 | PURPOSE:To improve the reproducibility and stability of oscillation wavelengths by forming a double hetero structure on a GaAs surface slanted a specific angle with respect to an equivalent plane to (001) plane in a title laser where (AlxGa1-x) InP is used as an active layer. CONSTITUTION:A double hetero structure is formed by successively laminating an n-(Al0.4Ga0.6)0.5In0.5P cladding layer 2, an undoped Ga0.5In0.5P active layer 3, and a P-(Al0.4Ga0.6)0.5In0.5P cladding layer 4 on an n-GaAs substrate 1 where there is taken as a surface a (001) plane slanted 4-15 preferably 5 in a [-1-10] direction. Then, an n-GaAs blocking layer 5 is formed, and a region 7 where n-GaAs is removed in a stripe-shape is formed, on which region 7 a p-GaAs capping layer 6 is formed. The direction of the stripe is set to be the [1-10] direction. Further, electrodes 8, 9 are formed on the p and n sides to provide a double hetero structure striped laser. Thus, a visible semiconductor laser where oscillation wavelengths can stably be yielded. |
| 公开日期 | 1990-11-16 |
| 申请日期 | 1989-04-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85313]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | GOMYO AKIKO. Visible semiconductor laser. JP1990280393A. 1990-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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