半導体レーザ
文献类型：专利
| 作者 | 鴫原 君男; 池田 健志; 青柳 利隆; 永井 豊 |
| 发表日期 | 1996-03-27 |
| 专利号 | JP1996031663B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To obtain phase coincidence in an arbitrary wavelength and an arbitrary refractive index by forming a partial reflection,region of two layers including a front coating film, guiding phase coincidence condition in the arbitrary wavelength and the arbitrary refractive index of a substance for forming a partial reflection film, and forming it on the front edge face of a semiconductor laser. CONSTITUTION:A partial reflection region is formed of two layers of a front coating film 2 having a refractive index n2 capable of performing a low reflectivity, a film thickness h2 (=lambda0/4n2, lambda0 a wavelength in a free space) and a coating film 3 of a rear surface. High reflectivity is performed, and a partial reflection film 4a having a refractive index n3, a film thickness xlambda0 completely coincident with the phase of a light passing the periphery is formed on a semiconductor laser front edge face. |
| 公开日期 | 1996-03-27 |
| 申请日期 | 1990-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85319]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 鴫原 君男,池田 健志,青柳 利隆,等. 半導体レーザ. JP1996031663B2. 1996-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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