Semiconductor laser and manufacturing method therefor
文献类型：专利
| 作者 | UCHIDA, SATOSHI |
| 发表日期 | 2000-10-10 |
| 专利号 | US6130108 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and manufacturing method therefor |
| 英文摘要 | Fabrication of a semiconductor laser having a double hetero junction structure including: an active layer; cladding layers including an upper layer and a lower layer, the cladding layers sandwiching the active layer; and a current blocking layer including a stripe recess for acting as a current passage. The current blocking layer is provided within at least one of the cladding layers. The current blocking layer includes a plurality of layers, at least one layer of the layers having a slit therein extending transversely to the stripe recess. |
| 公开日期 | 2000-10-10 |
| 申请日期 | 1999-11-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | UCHIDA, SATOSHI. Semiconductor laser and manufacturing method therefor. US6130108. 2000-10-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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