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文献类型：专利
| 作者 | MATSUOKA TAKASHI; NAGAI HARUO |
| 发表日期 | 1991-09-04 |
| 专利号 | JP1991058191B2 |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve laser illumination efficiency by a method wherein a pair of electrode layers constituting a semiconductor laser is connected to a semiconductor clad layer continuously from the upper direction of the substrate to realize a monolithically formed device small in size and high in density. CONSTITUTION:A semiconductor clad layer 4 is formed on the surface (a) of a substrate 2 and abuts against the surface (b) of the substrate 2. A stripe shaped semiconductor active layer 5 is formed on the clad layer 4 and abuts against the surface (b) in a region on the surface (b) side of the substrate 2. A metal electrde layer 7 is ohmically connected to a region of the clad layer 4 not mounting the active layer 5. A metal electrode layer 8 is ohmically connected to a clad layer 6. A voltage supplied across the electrodes 7 and 8 causes a current to run through the clad layer 6, active layer 5, and clad layer 4. Consequentially, the active layer 5 illuminates and a laser beam is radiated out of the end surface. |
| 公开日期 | 1991-09-04 |
| 申请日期 | 1981-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85334]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | MATSUOKA TAKASHI,NAGAI HARUO. -. JP1991058191B2. 1991-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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