Manufacture of laser diode
文献类型：专利
| 作者 | SHIGE NORIYUKI |
| 发表日期 | 1982-11-26 |
| 专利号 | JP1982192092A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of laser diode |
| 英文摘要 | PURPOSE:To manufacture the concave part of an N-type clad layer of laser diode just upon a V-shaped groove having favorable reproducibility by a method wherein the main face of substrate is formed in the face having the inclination in relation to the (110) crystal face in the crystal direction. CONSTITUTION:The GaAs substrate 2 having the V-shaped groove 1 at the center of main face is prepared. The V-shaped groove 1 trereof is provided along the direction, while the main face 11 of the substrate 2 has the inclination alpha between the (100) crystal face 12. The inclination alpha thereof is made as larger than unevenness of the flatening work of the main face. As a result, alpha is always larger than the inclination beta of the main face 11 in relation to the direction of plane making a right angle with the V-shaped groove Accordingly when the N-type clad layer 3 consisting of GaAlAs is formed on the main face 11 of the substrate 2 using the substrate 2, the concave part 5 of the layer 3 trereof can be formed just upon the V-shaped groove 1 of the substrate 2 having favorable reproducibility. When an active layer of GaAs is formed thereon to form the laser diode, the light emitting part is made as the active layer part corresponding to the concave part 5, and the mode of laser beam is stabilized. |
| 公开日期 | 1982-11-26 |
| 申请日期 | 1981-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85344]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI. Manufacture of laser diode. JP1982192092A. 1982-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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