Semiconductor laser
文献类型：专利
| 作者 | ITOH, KUNIO; INOUE, MORIO |
| 发表日期 | 1977-07-05 |
| 专利号 | US4034311 |
| 著作权人 | MATSUSHITA ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | Double-hetero-structure injection laser can be improved to have low threshold current in room-temperature continuous-wave operation. The improvement is obtained in one case wherein an n-type Ga1-yAlyAs region (1>/=y>0) is first formed, a Ga1-zInzAs is grown thereon as an active region and a p-type Ga1-yAlyAs region is then formed on the active region and the value of z is so selected as to make the lattice constants of the active region smaller than those of the first and third regions. |
| 公开日期 | 1977-07-05 |
| 申请日期 | 1976-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85346]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | ITOH, KUNIO,INOUE, MORIO. Semiconductor laser. US4034311. 1977-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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