InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer
文献类型：专利
| 作者 | BOUR, DAVID; LIN, CHAOKUN; TAN, MICHAEL; PEREZ, BILL |
| 发表日期 | 2006-07-12 |
| 专利号 | EP1679774A2 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer |
| 英文摘要 | The invention relates to a laser comprising a bottom mirror; an active region comprising a quantum well layer; a first layer of a p-type semiconductor; a barrier layer; a first tunnel junction layer; a second tunnel junction layer; and a top mirror. All of the first layer, the barrier layer, and the first and second tunnel junction layers comprise a material of a InP family of materials. The first and second tunnel junction layers are adjacent to one another and form a tunnel junction, wherein the tunnel junction and the active region lie between the top and bottom mirrors. |
| 公开日期 | 2006-07-12 |
| 申请日期 | 2003-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85427]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID,LIN, CHAOKUN,TAN, MICHAEL,et al. InP based VCSEL with zinc-doped tunnel-junction and diffusion blocking layer. EP1679774A2. 2006-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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