Vertical cavity surface emitting laser with reduced parasitic capacitance
文献类型：专利
| 作者 | EBELING, KARL; EBELING KARL JOACHIM |
| 发表日期 | 2003-03-13 |
| 专利号 | WO2002037630A3 |
| 著作权人 | U-L-M PHOTONICS GMBH |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical cavity surface emitting laser with reduced parasitic capacitance |
| 英文摘要 | An oxide-confined vertical cavity surface emitting laser having reduced parasitic capacitance. The VCSEL includes a substrate having a first mirror stack grown epitaxially thereon. The first mirror stack includes a plurality of semiconductor layers and is doped with a first doping type. An active region is grown epitaxially above the first mirror stack for generating a laser emission. A control layer is grown epitaxially above the first mirror stack, between first mirror stack and the active region or above the active region, and includes a central non-oxidized conducting portion and an outer, laterally oxidized insulating portion. A second mirror stack is grown epitaxially above the active region and the control layer. The second mirror stack includes a second plurality of semiconductor layers doped with a second doping type. The second plurality of semiconductors layers includes pairs of high index and low index materials. The low index material layers are generally equally laterally oxidized and have a non-oxidized central portion. The penetration of the lateral oxidation of the low index material layers is less than the oxidation penetration for the outer laterally oxidized insulating portion of the control layer. |
| 公开日期 | 2003-03-13 |
| 申请日期 | 2001-10-24 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85495]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | U-L-M PHOTONICS GMBH |
| 推荐引用方式 GB/T 7714 | EBELING, KARL,EBELING KARL JOACHIM. Vertical cavity surface emitting laser with reduced parasitic capacitance. WO2002037630A3. 2003-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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