Long wavelength VCSEL having oxide-aperture and method for fabricating the same
文献类型：专利
| 作者 | SHIN, JAE-HEON; KWON, O-KYUN; HAN, WON-SEOK; JU, YOUNG-GU; YOO, BYUENG-SU |
| 发表日期 | 2003-05-08 |
| 专利号 | US20030086463A1 |
| 著作权人 | KOREA ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Long wavelength VCSEL having oxide-aperture and method for fabricating the same |
| 英文摘要 | A long-wavelength VCSEL is provided. The laser includes a first conductive semiconductor substrate, lower mirror layers that are formed on the semiconductor substrate and are proper to the Bregg-reflection, an active layer formed on the lower mirror layer, a current passage layer that is formed on the active layer as a path through which an electric current flows into the active layer, current blocking layers that are formed on the active layer to encompass the current passage layer and limit the path through which an electric current flows into the active layer, an intra-cavity contact layer formed on a portion of the current passage layer and the current blocking layer, upper mirror layers that are formed on a portion of the intra-cavity contact layer and are proper to the Bragg-reflection, a first electrode formed on the exposed surface of the intra-cavity contact layer and the upper mirror layers, and a second electrode formed on a predetermined surface of the semiconductor substrate |
| 公开日期 | 2003-05-08 |
| 申请日期 | 2002-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85586]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOREA ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | SHIN, JAE-HEON,KWON, O-KYUN,HAN, WON-SEOK,et al. Long wavelength VCSEL having oxide-aperture and method for fabricating the same. US20030086463A1. 2003-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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