Vertical cavity surface emitting laser
文献类型：专利
| 作者 | MAEDA, OSAMU; SHIOZAKI, MASAKI; ARAKIDA, TAKAHIRO |
| 发表日期 | 2011-12-13 |
| 专利号 | US8077752 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser |
| 英文摘要 | A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region. |
| 公开日期 | 2011-12-13 |
| 申请日期 | 2008-12-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85762]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | MAEDA, OSAMU,SHIOZAKI, MASAKI,ARAKIDA, TAKAHIRO. Vertical cavity surface emitting laser. US8077752. 2011-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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