Surface emitting laser and semiconductor light emitting device
文献类型：专利
| 作者 | KINOSHITA, JUNICHI |
| 发表日期 | 2003-08-14 |
| 专利号 | US20030152125A1 |
| 著作权人 | KINOSHITA JUNICHI |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting laser and semiconductor light emitting device |
| 英文摘要 | A surface emitting laser alleviated in reflection from facets of its active layer and waveguide layer and remarkably improved in oscillation property is configured not to make vertical side surfaces relative to the active layer or the waveguide direction. In VCSEL, side surfaces of the active layer are processed not to made vertical surfaces. In GCSEL, its crystalline surface orientation and its waveguide structure are chosen appropriately not to make upright surfaces on facets of the waveguide. |
| 公开日期 | 2003-08-14 |
| 申请日期 | 2002-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KINOSHITA JUNICHI |
| 推荐引用方式 GB/T 7714 | KINOSHITA, JUNICHI. Surface emitting laser and semiconductor light emitting device. US20030152125A1. 2003-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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