Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region
文献类型：专利
| 作者 | LUKAS CZORNOMAZ; MIRJA RICHTER; HEIKE E. RIEL; JENS HOFRICHTER |
| 发表日期 | 2014-05-07 |
| 专利号 | GB2507512A |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region |
| 英文摘要 | A semiconductor device 1 comprising an optically passive aspect 2 and an optically active material 3 wherein the optically passive aspect 2 further comprises at least a crystalline seed layer (4), the optically active material 3 being epitaxially grown in a predefined structure 5 provided in the optically passive aspect 2 that extends to at least an upper surface 4 of the seed layer 4, and the optically passive aspect 2 is structured to comprise a passive photonic structure 6 subsequent to the growth of the optically active material 3. The active material 3 may be implemented as a light emitting structure e.g. a laser, an LED or a optical amplifier amongst others. The predefined structure 5 may be a hole or a trench. The photonic structure 6 may be a waveguide. The device may include a VCSEL. Holes (11 in figure 4) may be formed in the photonic structure 6 and the active region 3. The size of the holes may be tapered to increase towards the photonic structure 6 or may be the same size. The device may comprise a 2D photonic crystal. |
| 公开日期 | 2014-05-07 |
| 申请日期 | 2012-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | LUKAS CZORNOMAZ,MIRJA RICHTER,HEIKE E. RIEL,et al. Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region. GB2507512A. 2014-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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