Semiconductor laser, ray module using the same and ray communication system
文献类型：专利
| 作者 | KONDOW, MASAHIKO; KITATANI, TAKESHI; KUDO, MAKOTO |
| 发表日期 | 2002-11-28 |
| 专利号 | US20020176465A1 |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser, ray module using the same and ray communication system |
| 英文摘要 | In a semiconductor laser for emitting light perpendicular to substrate crystal, including, on the substrate crystal, an active layer for generating light, a cavity structure sandwiching the active layer by reflecting mirrors so as to obtain a laser beam from the light generated from the active layer, and a regrown semiconductor layer between the active layer and one of the reflecting mirrors, a regrown interface or a face very close to the regrown interface is formed by a thin film containing dopants of high concentration. With the configuration, an adverse influence of a contamination deposit on the regrown interface is eliminated by delta-doping the regrown interface. The cost is reduced and device resistance is also reduced to 50 OMEGA or less. Thus, an edge emitting laser (VCSEL) for realizing a optical module achieving a high speed characteristic over 10 Gb/s is obtained. |
| 公开日期 | 2002-11-28 |
| 申请日期 | 2002-05-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86258]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | KONDOW, MASAHIKO,KITATANI, TAKESHI,KUDO, MAKOTO. Semiconductor laser, ray module using the same and ray communication system. US20020176465A1. 2002-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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