Long wavelength vertical cavity surface emitting laser
文献类型：专利
| 作者 | NAONE, RYAN LIKEKE; JACKSON, ANDREW W.; CHIROVSKY, LEO M. F. |
| 发表日期 | 2006-03-28 |
| 专利号 | US7020172 |
| 著作权人 | OPTICAL COMMUNICATION PRODUCTS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Long wavelength vertical cavity surface emitting laser |
| 英文摘要 | Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 3 μm light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls. |
| 公开日期 | 2006-03-28 |
| 申请日期 | 2004-05-10 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86412]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTICAL COMMUNICATION PRODUCTS, INC. |
| 推荐引用方式 GB/T 7714 | NAONE, RYAN LIKEKE,JACKSON, ANDREW W.,CHIROVSKY, LEO M. F.. Long wavelength vertical cavity surface emitting laser. US7020172. 2006-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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