Semiconductor laser
文献类型：专利
| 作者 | OTA YOICHIRO; YAGI TETSUYA |
| 发表日期 | 1989-09-20 |
| 专利号 | JP1989235397A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:Tp reduce astigmatic difference by providing a diffusion region of a high impurity concentration, which is of the same conduction type as that of a clad layer, within the clad layer along the ridge or a stripe-shaped groove. CONSTITUTION:When a negative voltage is applied to an n-type electrode 10 and a p-type electrode 11, concentrated current flows through a ridge 9. At this time, in the portion proximal to the bottom of the ridge 9, electrons and positive holes are injected from a lower clad layer 2 and an upper clad layer 4 respectively, and light emission due to the recombination of the electrons and holes occurs. With the increase in an injected current, induced emission begins shortly, and the laser starts to oscillate. Light leaking to the upper clad layer 4 is confined by the difference of the refraction coefficient built in a p-type dopant diffusion region 8. As a result of this, the control of the horizontal transverse mode become close to that of the vertical transverse mode, and astigmatic difference is made small. Thus, an image can be focused on a more small spot. |
| 公开日期 | 1989-09-20 |
| 申请日期 | 1988-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86459]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO,YAGI TETSUYA. Semiconductor laser. JP1989235397A. 1989-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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