Semiconductor light emitting device
文献类型：专利
| 作者 | SAKAI KAZUO; KUSHIRO YUKITOSHI; NISHIMURA KIMISUKE |
| 发表日期 | 1990-08-13 |
| 专利号 | JP1990203582A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To effectively introduce output light into external medium by constituting an optical waveguide layer of transition metal element, and rotating the plane of polarization of the output light of the laser region by magnetic field from a magnetic field applying part. CONSTITUTION:In a semiconductor light emitting element part A, the following are formed on the same semiconductor substrate; a laser region A1 which emits light, and an optical waveguide region A2 having a semiconductor waveguide layer arranged so as to couple with the output light from the region A The emitted light from the region A1 is output in the direction of the region A2 constituting refractive index waveguide structure to control a transversal mode. On the surface of an optical waveguide layer 4 in the region A1, a 1/4 wavelength shift circuit 15 is formed. TE mode light enters an optical waveguide layer 9 in the region A2. Magnetic field having a component parallel with the optical axis of the optical waveguide layer 9 is applied by a magnetic field applying part B. As the result, Faraday effect generates and the plane of polarization rotates, so that the output light is effectively introduced into external medium. |
| 公开日期 | 1990-08-13 |
| 申请日期 | 1989-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86461]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | SAKAI KAZUO,KUSHIRO YUKITOSHI,NISHIMURA KIMISUKE. Semiconductor light emitting device. JP1990203582A. 1990-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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