Manufacture of low dislocation compound semiconductor wafer
文献类型：专利
| 作者 | TOYOSHIMA TOSHIYA; NAKAGAWA JIYUNKICHI; MIZUNIWA SEIJI |
| 发表日期 | 1983-01-28 |
| 专利号 | JP1983015228A |
| 著作权人 | HITACHI DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of low dislocation compound semiconductor wafer |
| 英文摘要 | PURPOSE:To fabricate low dislocation compound semiconductor wafers by a method wherein a three dimensional compound semiconductor layer is developed through epitaxial growth a compound semiconductor substrate, and then the objective low dislocation compound semiconductor is developed through epitaxial growth thereon. CONSTITUTION:After preprocessing such as etching, a GaAs substrate 2 is set in a substrate holder 1 made of graphite. Ga 20g, GaAs 3g and Al 50mg are put in a solution container 4 formed in a slide portion 3 made of graphite, while Ga 20g and GaAs 4g are put in another solution container 5. The surface of the substrate holder made of praphite is heated up to 950 deg. and the solution container 4 is disposed just above the substrate 2 so that the solution comes into contact with the substrate 2. In this state, the temperature of the entire graphite is cooled down 10 deg.C at a cooling speed of 0.1 deg.C/ mm. When the surface temperature of the substrate holder reaches 850 deg.C, another solution container 5 is disposed just above the substrate 2 so that the solution comes into contact with the substrate 2. In this state, the entire graphite is cooled in its temperature down 40 deg.C at a cooling speed of 0.1 deg.C/mm. continuously. In such a manner, low dislocation compound semiconductor wafers can be fabricated with high yield. |
| 公开日期 | 1983-01-28 |
| 申请日期 | 1981-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86462]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI DENSEN KK |
| 推荐引用方式 GB/T 7714 | TOYOSHIMA TOSHIYA,NAKAGAWA JIYUNKICHI,MIZUNIWA SEIJI. Manufacture of low dislocation compound semiconductor wafer. JP1983015228A. 1983-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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