Semiconductor laser element
文献类型：专利
| 作者 | YOSHIDA TOMOHIKO; YAMAGUCHI MASAHIRO; HAYASHI HIROSHI; KASAI SHUSUKE; YANO MORICHIKA |
| 发表日期 | 1989-07-11 |
| 专利号 | JP1989175284A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To make a laser element oscillate stably for a long period even though it oscillates with a high beam output, by laminating a p-type optical absorption layer having an energy gap smaller than that of an active layer, a p-type carrier block layer having an energy gap larger than that of the optical absorption layer, and an n-type electric current bottleneck layer in order on one side of clad layers so that each stripe region is sandwiched between the above layers. CONSTITUTION:An n-type clad layer 22, a p-type active layer 23, a p-type clad layer 24, a p-type optical absorption layer 25, a p-type carrier block layer 26, an n-type electric current bottleneck layer 27, and an n-type layer 28 are laminated in order. Then, a photoresist mask is formed in a stripe like pattern and the current bottleneck layer 27 is etched halfway and continuously is etched by HF. Further, the p-type optical absorption layer 25 is etched by an etchant consisting of NH4OH and H2O2. In this way, after forming a groove part 20 having a cross section form of an inverted trapezoid, the photoresist mask is removed. A p-type clad layer 29 is laminated on the n-type GaAs layer 28 and in the groove part 20 by an ordinary liquid phase epitaxy process. Then, a p-type cap layer 30 is laminated and an electrode is mounted on its layer. Thus, there is no possibility that the temperature in the active layer rises, and this approach prevents the deterioration of the element even though this element oscillates with a high light output and then, the element oscillates stably for a long period. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA TOMOHIKO,YAMAGUCHI MASAHIRO,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1989175284A. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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