半導体レーザ
文献类型：专利
| 作者 | 池田 昌夫; 中野 一志; 戸田 淳 |
| 发表日期 | 1998-11-06 |
| 专利号 | JP2847702B2 |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To improve lifetime and static characteristics, by causing the carrier concentration of a p-type clad layer in a double hetero structure of the AlGaInP semiconductor laser to come to a low level in a region part from an active layer up to the prescribed distance and to come to a high concentration in a remaining region that is apart from the above prescribed distance. CONSTITUTION:A MOCVD process allows an n-type (Al0.5Ga0.5)0.5In0.5P clad layer 3; an undoped Ga0.5In0.5P active layer 4; a p-type (Al0.5Ga0.5)0.5In0.5P clad layer 11 having two stages of positive concentration distribution where the doping amount of Zn, that is, a positive hole concentration is a low concentration p1 and a region separated by a distance d from an active layer comes to a high concentration p2 by increasing the doping amount of Zn; and a p-type GaAs cap layer 6 to grow one after another on an n-type GaAs substrate 2. Required ions are implanted in such a way that ions reaches the p-type AlGaInP clad layer 11 by leaving the center part of the cap layer 6 in a stripe form and a semiconductor laser 12 is made up by forming an ion-implanted high resistance layer 7. |
| 公开日期 | 1999-01-20 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86469]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 昌夫,中野 一志,戸田 淳. 半導体レーザ. JP2847702B2. 1998-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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