Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OBE ISAO; TODOROKI SATORU |
| 发表日期 | 1987-08-13 |
| 专利号 | JP1987185388A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve basic characteristics such as threshold current value, operating current value and to enhance the output of a semiconductor laser by reducing the thickness of a semiconductor active layer disposed within a predetermined range from the end face of a semiconductor laser along a stripe smaller than that of the active layer of a stripe except it. CONSTITUTION:An etching mask 11 which covers a region except a region having 4mum of width of a portion of 20mum or larger from the end face and 8mum of width of the portion except the region is formed on a semiconductor substrate The portion from the mask 11 is etched, a channel 12 is formed, and the mask 11 is removed. A semiconductor light enclosing layer 2, a semiconductor active layer 3, a semiconductor light enclosing layer 4, and a semiconductor cap layer 5 are sequentially formed by a liquid epitaxial technique on the substrate Then, a contact region 6 is formed to the depth which arrives at part of the layer 4 from the surface of the layer 5 by diffusing technique. Electrodes 7 are formed on the layer 5 including the region 6 and the back surface of the substrate 1 to obtain a semiconductor laser. |
| 公开日期 | 1987-08-13 |
| 申请日期 | 1986-02-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86472]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OBE ISAO,TODOROKI SATORU. Semiconductor laser and manufacture thereof. JP1987185388A. 1987-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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