Semiconductor laser device
文献类型：专利
| 作者 | TAMURA HIDEO; KURIHARA HARUKI; SAGARA MINORU; MATSUMOTO KENJI |
| 发表日期 | 1984-11-13 |
| 专利号 | JP1984200483A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress the deformation of the groove shape formed on the substrate to the utmost without causing a growth failure at crystal growth by arranging AlxGa1-xAs (0.1<=x<=1) layers which function only as deformation-preventing layers at least at two positions, upper and lowr positions within an n- GaAs layer as a current blocking layer. CONSTITUTION:On a p-GaAs substrate 20, a deformation preventing layer 21 consisting of n-Al0.4Ga0.6As, a current blocking layer 22 of n-GaAs, a deformation preventing layer 23 of n-Al0.4Ga0.6As and a cap layer 24 of n-GaAs are successively crystal-grown to 0.05mum, 0.6mum, 0.05mum and 0.05mum thick respectively. After that, a groove 25 is formed so as to reach the substrate 20. On that substrate, a p-Al0.45Ga0.55As first clad layer 26, a Ga0.9Al0.1As active layer 27, an n-Al0.45Ga0.55As second clad layer 28 and an n-GaAs ohmic layer 29 are successively crystal-grown, on which electrodes 30 and 31 are formed. In this constitution, a width of the groove (w) is limitted by the deformation preventing layer 23 and a current contructive width (u) is limitted by the deformation preventing layer 2 Consequently, the shape of the groove is hardly deformed and the optical characteristics nearly as desired in the design can be obtained. |
| 公开日期 | 1984-11-13 |
| 申请日期 | 1983-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86476]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,KURIHARA HARUKI,SAGARA MINORU,et al. Semiconductor laser device. JP1984200483A. 1984-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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