Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; SUYAMA NAOHIRO |
| 发表日期 | 1984-01-28 |
| 专利号 | JP1984017293A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable to excite the stripe part of the titled device having favorable flatness and low light scatter loss in the stable and basically lateral mode by a method wherein concaves and convexes or curves, etc., are formed to an active layer at the part other than a stripe type oscillation region to enlarge light scatter loss. CONSTITUTION:An N type clad layer 15, the active layer 16, a P type clad layer 17 and a cap layer 18 are laminated in order on an N type GaAs substrate 14 according to the liquid phase epitaxial growth method, and moreover an Al2O3 film 19 is adhered thereon, and a stripe type window 21 is formed according to the photolithography method. A P-side electrode 20 is formed thereon by evaporation. An N-side electrode 22 is formed on the back of the substrate 14. By forming the wave type concaves and convexes having the difference of height of about 0.1mum to the substrate 14 excluding the stripe part, the concave and convex shapes appear on the growth face of the substrate and the interface between the active layer formed thereon and the clad layer adhered with the (x) marks, and although light scatter loss is enlarged, light scatter loss is small on the flat stripe part. The lateral mode of laser oscillation is stabilized by the difference of light scatter loss thereof. |
| 公开日期 | 1984-01-28 |
| 申请日期 | 1982-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86479]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,SUYAMA NAOHIRO. Semiconductor laser element. JP1984017293A. 1984-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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