Method and apparatus for purifying solvent metal for liquid phase epitaxial growth or metallic solution
文献类型：专利
| 作者 | AMANO TOSHIMASA; KONDOU SUSUMU; NAGAI HARUO |
| 发表日期 | 1985-09-07 |
| 专利号 | JP1985173831A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method and apparatus for purifying solvent metal for liquid phase epitaxial growth or metallic solution |
| 英文摘要 | PURPOSE:To remove impurities in a raw material for growth simply, and to improve purity extremely and positively by removing impurities in a melt for growth, a quartz tube, a boat, etc. while using oxygen as a purifying medium and removing residual oxygen in a growth raw material melt through heat treatment in dried hydrogen. CONSTITUTION:A solvent metal or a metallic solution is held in a supply atmospheric gas under the state of humidifying at a temperature higher than a normal solution purifying temperature or a crystal growth temperature, and impurities except oxygen are removed by a reaction with moisture by humidifying and oxygen dissociated from moisture. Said supply atmospheric gas under the state of humidifying is changed over to a dried high-purity gas containing hydrogen, and the solvent metal or the metallic solution treated through said process is held at a temperature lower than said solution purifying temperature or crystal growth temperature and thermally treated in order to remove oxygen. Said purifying treatment is executed by using a device such as a purifier having a high-purity low-temperature gas supply means 1 supplying a reaction tube 6 with a high-purity low-temperature gas containing hydrogen and a high-purity humidifying gas supply means for supplying the reaction tube 6 with a high-purity humidifying gas. |
| 公开日期 | 1985-09-07 |
| 申请日期 | 1984-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | AMANO TOSHIMASA,KONDOU SUSUMU,NAGAI HARUO. Method and apparatus for purifying solvent metal for liquid phase epitaxial growth or metallic solution. JP1985173831A. 1985-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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