Surface emission type semiconductor laser
文献类型：专利
| 作者 | TAKAMIYA SABURO; HIGUCHI HIDEYO |
| 发表日期 | 1988-04-26 |
| 专利号 | JP1988095690A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emission type semiconductor laser |
| 英文摘要 | PURPOSE:To monitor beams emitted from a second main surface by monolithically forming a photodetector such as a photodiode to the second main surface. CONSTITUTION:Beams L generated in an active layer 1 are reflected, using a first main surface 5 and another surface 13 as mirror surfaces, thus conducting laser oscillation. Beams are monitored by a photodiode 15 consisting of P-type clad layer 3 and an N-type contact layer 10 at that time, and an optical output emitted can be kept constant. The forbidden band width of an N-type contact layer 10 shaping one part of the photodiode 15 is controlled so that absorptance to laser beams during the reciprocation of the layer 10 is brought to 50% or less. The control can be executed by controlling the composition of the N-type contact layer 10 or controlling thickness thereof, but it can also be adjusted by fluctuating bias voltage applied to a P-N junction consisting of the P-type clad layer 3 and the N-type contact layer 10. |
| 公开日期 | 1988-04-26 |
| 申请日期 | 1986-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86481]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | TAKAMIYA SABURO,HIGUCHI HIDEYO. Surface emission type semiconductor laser. JP1988095690A. 1988-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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