Manufacture of buried type semiconductor laser device
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; IWASE MASAYUKI |
| 发表日期 | 1989-04-13 |
| 专利号 | JP1989094690A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried type semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a narrow activated layer width with good reproducibility and a laser element having good burying layer by reforming a mesa profile into an almost vertical mesa profile by means of dry etching. CONSTITUTION:When preparing a buried semiconductor laser element by providing a mesa profile to a double heterojunction including an activated layer 13, the double heterojunction being buried by a burying layer of semiconductor whose refractive index is smaller than that of the activated layer 13, said mesa profile is reformed into an almost vertical mesa profile by means of dry etching. For example, an n-type InP clad layer 12, a GaInAsP activated layer 13, and a p-type InP clad layer 14 are grown on an n-type InP substrate 11, and the part thus grown is etched by a reactive ion beam etching as far as to the n-type InP clad layer 12. Then a p-type InP current blocking layer 16 and an n-type InP current blocking layer are grown by separating a resist 18, and a p-type InP clad layer 14 or the like are grown by separating an SiO2 layer 15. |
| 公开日期 | 1989-04-13 |
| 申请日期 | 1987-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86486]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,IWASE MASAYUKI. Manufacture of buried type semiconductor laser device. JP1989094690A. 1989-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。