Methods of making semiconductor light-emitting devices and vapour phase growth apparatus used for carrying out the methods
文献类型：专利
| 作者 | IKEDA, MASAO C/O PATENT DIVISION; MORI, YOSHIFUMI C/O PATENTS DIVISION; KAWAI, HIROJI C/O PATENTS DIVISION |
| 发表日期 | 1986-02-12 |
| 专利号 | EP0171242A2 |
| 著作权人 | SONY CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Methods of making semiconductor light-emitting devices and vapour phase growth apparatus used for carrying out the methods |
| 英文摘要 | A method of making a semiconductor light-emitting device comprises forming by epitaxial growth on a substrate (1) a plurality of layers (61 to 65) of semiconductive compounds consisting of elements of groups III-V of the periodic table. The substrate (1) is heated to a temperature of 580°C to 630°C, and a mixed gas of triethyl compounds of metals of group III and a phosphine gas are separately fed and caused to flow in such a way that the ratio of phosphine to the triethyl compounds of metals of group III is at least 300: The gases are mixed immediately upstream of the substrate (1) to form a semiconductive layer of a given composition comprising elements of groups III-V on the substrate (1). The procedure is repeated to form a plurality of semiconductor layers (61 to 65) on the substrate (1), thereby obtaining a semiconductor light-emitting device. An apparatus (10) for carrying out the method is also described. |
| 公开日期 | 1986-02-12 |
| 申请日期 | 1985-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | IKEDA, MASAO C/O PATENT DIVISION,MORI, YOSHIFUMI C/O PATENTS DIVISION,KAWAI, HIROJI C/O PATENTS DIVISION. Methods of making semiconductor light-emitting devices and vapour phase growth apparatus used for carrying out the methods. EP0171242A2. 1986-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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