Manufacture of semiconductor laser
文献类型：专利
| 作者 | MAMINE TAKAYOSHI; ODA TATSUJI; YONEYAMA OSAMU |
| 发表日期 | 1986-07-02 |
| 专利号 | JP1986144894A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve controllability and uniformity of the thickness of individual semiconductor layers as well as controllability of their composition and obtain desired characteristics, by sequentially forming a first clad layer, active layer, second clad layer and cap layer in a flattened manner on a flat substrate. CONSTITUTION:A clad layer 12, active layer 13, clad layer 14 and cap layer 15 are respectively grown epitaxially on the one main surface of a flat substrate 11 by the continuous MOCVD or the like. Then a part with a required thickness of the layer 14 is left with a depth ranging from the layer 15 to the layer 14 to selectively etch the part where a current strangulation region is to be formed. Then a different conductive type of semiconductor layer is epitaxially grown on the exposed layer 14 and the remaining striped layer 15 so as to envelop the layer 15, resulting in forming a current strangulation layer 17. Then the layer 17 is coated with a material layer 18 to flatten the surface of the former layer. Consequently the layer 15 and the current strangulation region 27 are exposed on the surface. The exposed surface is coated with an insulation layer 19 as necesary to form a striped electrode window on the layer 15 so that an electrode 20 is ohmically formed, whereas the surface of the back of the substrate 11 is ohmically coated with an electrode 2 |
| 公开日期 | 1986-07-02 |
| 申请日期 | 1984-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86493]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI,ODA TATSUJI,YONEYAMA OSAMU. Manufacture of semiconductor laser. JP1986144894A. 1986-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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