Semiconductor laser device
文献类型：专利
| 作者 | MORINAGA, MOTOYASU; FURUYAMA, HIDETO; NAKAMURA, MASARU; SUZUKI, NOBUO; HIRAYAMA, YUZO; OKUDA, HAJIME |
| 发表日期 | 1990-11-27 |
| 专利号 | US4974232 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region. |
| 公开日期 | 1990-11-27 |
| 申请日期 | 1989-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86497]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | MORINAGA, MOTOYASU,FURUYAMA, HIDETO,NAKAMURA, MASARU,et al. Semiconductor laser device. US4974232. 1990-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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