Semiconductor laser
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1989-10-31 |
| 专利号 | JP1989272180A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability of a semiconductor laser even if it is operated for a long time or period and to prevent deterioration of element characteristics during high output operation by forming a buffer layer of a superlattice structure. CONSTITUTION:An n-type superlattice buffer layer 102 as a first semiconductor layer is formed on a semiconductor substrate 101, by repeating 30 cycles of deposition each consisting of depositing an AlAs thin film having a thickness of 50Angstrom approximately corresponding to de Broglie wavelength and a GaAs thin film having thickness of 50Angstrom . An n-type Al0.4Ga0.6As first clad layer 103, an undoped Al0.05Ga0.95As active layer 104 as a third semiconductor layer and a p-type Al0.4Ga0.6As second clad layer 105 as a fourth semiconductor layer are deposited sequentially in this order. Hence, it is possible to decrease through dislocation and to absorb stress generated at the interface between the III-V compound semiconductor 105 and the II-VI compound semiconductor 107 by the superlattice buffer layer. Thus, it is possible to obtain a semiconductor laser having prolonged lifetime. |
| 公开日期 | 1989-10-31 |
| 申请日期 | 1988-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Semiconductor laser. JP1989272180A. 1989-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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