Semiconductor element, wavelength variable semiconductor laser and semiconductor phase modulator
文献类型：专利
| 作者 | UOMI KAZUHISA; SAKANO SHINJI; OKAI MAKOTO; KAYANE NAOKI |
| 发表日期 | 1990-07-02 |
| 专利号 | JP1990170589A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element, wavelength variable semiconductor laser and semiconductor phase modulator |
| 英文摘要 | PURPOSE:To make a semiconductor element variable in refractive index by a method wherein an excited carrier density control means capable of regulating the semiconductor element in dielectric constant and refractive index is provided. CONSTITUTION:A contact layer 7 is made to grow, and an n-side electrode 10, a p-side electrode 8, and an excited carrier control electrode 9 are formed and then isolated to be formed into an element. The element can be much varied in oscillation frequency through the quantity of an injection current into the excited carrier control electrode 9. That, is an excited carrier density inside a multi-quantum well layer 3 is made to vary through the injection of a current, a wave function is selected, an refractive index changes to make an outer light waveguide vary in Bragg reflection wavelength, and furthermore the excited carrier density inside the multi-quantum well layer 3 is made to change up to a specified range, whereby an oscillation wavelength can be continuously changed, and the quantity of the wavelength change converted into a refractive index change is large. By this setup, a semiconductor element of this design can be made to vary much in refractive index. |
| 公开日期 | 1990-07-02 |
| 申请日期 | 1988-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,SAKANO SHINJI,OKAI MAKOTO,et al. Semiconductor element, wavelength variable semiconductor laser and semiconductor phase modulator. JP1990170589A. 1990-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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