Semiconductor laser
文献类型：专利
| 作者 | SUEHIRO MASAYUKI; HIRATA TAKAAKI |
| 发表日期 | 1991-02-21 |
| 专利号 | JP1991040481A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To set a conductor laser optimal in coupling coefficient by a method wherein a diffraction grating is selectively formed on a part of a guide layer and the rest where the diffraction grating is not formed is formed into a flat shape. CONSTITUTION:Electron beam resist 21 is applied onto an optical guide layer 4, and a diffraction grating pattern 22 is exposed to light along a rib-type waveguide forming part in the direction of resonation through an electron beam exposure method. Following the exposure of the pattern 22, a part 23 outside the pattern 22 is exposed to light. The exposed parts are developed and subjected to a wet etching process. By this setup, a diffraction grating 5 is formed, and the part outside the grating 5 is removed to form a rib-type waveguide. Two rows of the diffraction gratings 5 and a flat part 24 sandwiched between the diffraction gratings 5 are provided to the upside of the rib-type waveguide. By this setup, the coupling coefficient of a conductor laser can be optimally set. |
| 公开日期 | 1991-02-21 |
| 申请日期 | 1989-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86506]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | SUEHIRO MASAYUKI,HIRATA TAKAAKI. Semiconductor laser. JP1991040481A. 1991-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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