Method of forming active region
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1991-08-15 |
| 专利号 | JP1991187283A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of forming active region |
| 英文摘要 | PURPOSE:To narrow the drive region and to improve controllability by stopping the first growth at the point of time when a film is grown on an active layer so as to diffusion, and then performing the drive at the same time during the second crystal growth. CONSTITUTION:When making a semiconductor laser inclusive of diffusion, the first crystal growth is stopped at the thickness of 0.5mum or less above an active layer, and next selective diffusion is done to the level of not reaching the active layer. Next, the second crystal growth is done, and at the same time with the growth the diffusion source is made to reach the active layer selectively. In this case, in the second crystal growth, the drive is also done naturally at the same time with the crystal growth, whereby an active region is made. Hereby, the width of the drive region can be narrowed, and it can be made with favorable controllability. |
| 公开日期 | 1991-08-15 |
| 申请日期 | 1989-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86507]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Method of forming active region. JP1991187283A. 1991-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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